- complementary metal-oxide-semiconductor structure
- комплементарная структура металл-оксид-полупроводник, комплементарная МОП-структура, КМОП-структура
The New English-Russian Dictionary of Radio-electronics. F.V Lisovsky . 2005.
The New English-Russian Dictionary of Radio-electronics. F.V Lisovsky . 2005.
complementary metal-oxide-semiconductor — jungtinis MOP darinys statusas T sritis radioelektronika atitikmenys: angl. CMOS structure; complementary metal oxide semiconductor; complementary MOS structure vok. CMOS Struktur, f; komplementäre MOS Struktur, f; komplementär symmetrische MOS… … Radioelektronikos terminų žodynas
SOS complementary metal-oxide-semiconductor — jungtinis silicio MOP darinys ant safyro statusas T sritis radioelektronika atitikmenys: angl. complementary MOS on sapphire structure; SOS complementary metal oxide semiconductor vok. CMOS auf Saphir Struktur, f; CMOS Struktur auf Saphirsubstrat … Radioelektronikos terminų žodynas
complementary metal-nitride-oxide-semiconductor structure — jungtinis metalo nitrido oksido puslaidininkio darinys statusas T sritis radioelektronika atitikmenys: angl. complementary metal nitride oxide semiconductor; complementary metal nitride oxide semiconductor structure; complementary MNOS structure… … Radioelektronikos terminų žodynas
complementary MOS-on-sapphire structure — jungtinis silicio MOP darinys ant safyro statusas T sritis radioelektronika atitikmenys: angl. complementary MOS on sapphire structure; SOS complementary metal oxide semiconductor vok. CMOS auf Saphir Struktur, f; CMOS Struktur auf Saphirsubstrat … Radioelektronikos terminų žodynas
Metal oxide adhesion — The strength of metal oxide adhesion effectively determines the wetting of the metal oxide interface. The strength of this adhesion is important, for instance, in production of light bulbs and fiber matrix composites that depend on the… … Wikipedia
complementary metal-nitride-oxide-semiconductor — jungtinis metalo nitrido oksido puslaidininkio darinys statusas T sritis radioelektronika atitikmenys: angl. complementary metal nitride oxide semiconductor; complementary metal nitride oxide semiconductor structure; complementary MNOS structure… … Radioelektronikos terminų žodynas
semiconductor device — ▪ electronics Introduction electronic circuit component made from a material that is neither a good conductor nor a good insulator (hence semiconductor). Such devices have found wide applications because of their compactness, reliability,… … Universalium
complementary MOS structure — jungtinis MOP darinys statusas T sritis radioelektronika atitikmenys: angl. CMOS structure; complementary metal oxide semiconductor; complementary MOS structure vok. CMOS Struktur, f; komplementäre MOS Struktur, f; komplementär symmetrische MOS… … Radioelektronikos terminų žodynas
structure MOS complémentaire — jungtinis MOP darinys statusas T sritis radioelektronika atitikmenys: angl. CMOS structure; complementary metal oxide semiconductor; complementary MOS structure vok. CMOS Struktur, f; komplementäre MOS Struktur, f; komplementär symmetrische MOS… … Radioelektronikos terminų žodynas
structure CMOS silicium-sur-saphir — jungtinis silicio MOP darinys ant safyro statusas T sritis radioelektronika atitikmenys: angl. complementary MOS on sapphire structure; SOS complementary metal oxide semiconductor vok. CMOS auf Saphir Struktur, f; CMOS Struktur auf Saphirsubstrat … Radioelektronikos terminų žodynas
structure CMOS sur saphir — jungtinis silicio MOP darinys ant safyro statusas T sritis radioelektronika atitikmenys: angl. complementary MOS on sapphire structure; SOS complementary metal oxide semiconductor vok. CMOS auf Saphir Struktur, f; CMOS Struktur auf Saphirsubstrat … Radioelektronikos terminų žodynas